Nitride-free spacer or oxide spacer for embedded flash memory

ABSTRACT

In some embodiments, a semiconductor substrate includes first and second source/drain regions which are separated from one another by a channel region. The channel region includes a first portion adjacent to the first source/drain region and a second portion adjacent the second source/drain region. A select gate is spaced over the first portion of the channel region and is separated from the first portion of the channel region by a select gate dielectric. A memory gate is spaced over the second portion of the channel region and is separated from the second portion of the channel region by a charge-trapping dielectric structure. The charge-trapping dielectric structure extends upwardly alongside the memory gate to separate neighboring sidewalls of the select gate and memory gate from one another. An oxide spacer or nitride-free spacer is arranged in a sidewall recess of the charge-trapping dielectric structure nearest the second source/drain region.

BACKGROUND

Flash memory is an electronic non-volatile computer storage medium that can be electrically erased and reprogrammed quickly. It is used in a wide variety of electronic devices and equipment. Common types of flash memory cells include stacked gate memory cells and split gate memory cells. Compared to stacked gate memory cells, split gate memory cells have higher injection efficiency, less susceptibility to short channel effects, and better over erase immunity.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying figures. It is noted that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.

FIG. 1 illustrates a cross-sectional view of a pair of split gate flash memory cells according to some embodiments of the present disclosure.

FIG. 2 illustrates a flow diagram of some embodiments of a method of forming split gate memory cells.

FIGS. 3-19 illustrate some embodiments of cross-sectional views at various stages of manufacture of a method of forming split gate flash memory cells.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.

Modern integrated circuits (ICs) often include logic devices and embedded memory disposed on a single substrate or die. One type of embedded memory included in such ICs is split gate flash memory. A split gate memory cell includes a source region and a drain region which are disposed within a semiconductor substrate and which are separated from one another by a channel region. A select gate (SG) is disposed over a first portion of the channel region nearest the drain, and is separated from the channel region by a SG dielectric. A memory gate (MG) is disposed adjacent to a sidewall of the SG and over a second portion of the channel region nearest the source, and is separated from the channel region by a charge-trapping dielectric layer. A nitride spacer, which can be formed as an aside during formation of logic devices on the die, can be disposed along a sidewall of the charge-trapping dielectric layer and over the channel region nearest the source.

During operation, the SG can be activated to enable current flow through the channel region (e.g., cause a stream of negatively charged electrons to flow between the source and drain regions). While the SG is activated, a large positive voltage can be applied to the MG, thereby attracting electrons from the channel region towards the MG. Some of these electrons become lodged in the charge-trapping layer, thereby changing the threshold voltage (Vt) of the memory cell. The resultant Vt corresponds to the data state stored in the cell. For example, if more than a predetermined amount of charge is lodged on the charge-trapping layer (e.g., magnitude of Vt is greater than some predetermined Vt), then the cell is said to store a first data state (e.g., a logical “0”); whereas if less than the predetermined amount of charge is lodged on the charge-trapping layer (e.g., magnitude of Vt is less than the predetermined Vt), then the cell is said to store a second data state (e.g., a logical “1”). By applying suitable bias conditions to the cell, electrons can be placed on (or stripped from) the charge-trapping layer to set corresponding data states for the cell. In this way, data can be written to and read from the memory cells.

Unfortunately, the nitride spacer disposed alongside the charge-trapping dielectric and disposed over the channel region can cause charge storage and removal anomalies. These anomalies tend to rear their head more as the cell undergoes more read and write operations. For example, due to the presence of the nitride spacer over the channel region, the nitride spacer can tend to undesirably trap charge and shift the Vt of the cell from expected values, particularly as the cell ages and has more read and write operations performed thereon.

The present disclosure relates to a split gate flash memory cell where a nitride-free spacer or an oxide spacer, either of which is relatively impervious to charge-trapping, is inserted in a sidewall recess of the charge-trapping layer nearest the source. Thus, this inserted spacer can extend along the sidewall recess of the charge-trapping layer directly over an outer edge portion of the channel region, and can extend upwards along the MG sidewall (or along a MG spacer sidewall), thereby limiting undesired charge-trapping. In some embodiments, if a nitride spacer is still present for the split gate flash memory, the inserted spacer effectively “pushes” the nitride sidewall spacer outwards so the nitride spacer no longer resides over the channel region. In this way, the nitride-free spacer or oxide spacer limits undesirably trapped charge and provides a flash memory cell with good performance over a long period of time.

FIG. 1 illustrates a cross-sectional view of some embodiments of an integrated circuit 100 comprising a pair of split gate memory cells disposed on a semiconductor substrate 108. The pair of split gate memory cell includes first and second memory cells 102 a, 102 b, which are configured to store separate data states and which are generally mirror images of one another about an axis of symmetry 103. Typically, integrated circuit 100 includes hundreds, thousands, millions, billions, etc., of such memory cells, but only a single pair is illustrated for simplicity and clarity of understanding.

The first and second memory cells 102 a, 102 b include first and second individual source regions 104 a, 104 b, respectively, and a common drain region 106 which is shared between the first and second memory cells. It will be appreciated that although region 106 is described as a “common drain region” and regions 104 a, 104 b are described as being “individual source regions”, the functionality of these regions may be flipped during some modes of operation and/or in some other implementations, such that “the common drain 106” may act as a common source region and the “individual source regions 104 a, 104 b” may act as individual drain regions. Thus, the terms “source” and “drain” are interchangeable in this regard, and may be referred to generically as “source/drain” regions.

The first and second memory cells 102 a, 102 b also include first and second select gates 110 a, 110 b, respectively, and first and second memory gates 112 a, 112 b, respectively. The first select gate 110 a and first memory gate 112 a are arranged over a first channel region 114 a, which separates the first individual source region 104 a and the common drain region 106. The second select gate 110 b and second memory gate 112 b are arranged over a second channel region 114 b, which separates the second individual source region 104 b and the common drain region 106.

Select gate dielectric 116 a, 116 b, such as silicon dioxide or a high-κ dielectric material, is arranged under the first and second select gates 110 a, 110 b, and separates the first and second select gates from the semiconductor substrate 108. Charge-trapping dielectric structure 118 a, 118 b separates the first and second memory gates 112 a, 112 b from the semiconductor substrate 108. Thus, the first and second memory gates 112 a, 112 b are disposed on a ledge corresponding to upper surface of charge-trapping dielectric structure 118 a, 118 b. The charge-trapping dielectric structure 118 a, 118 b can also extend vertically upwards between neighboring sidewalls of the first select gate 110 a and first memory gate 112 a, and between neighboring sidewalls of the second select gate 110 b and second memory gate 112 b to provide isolation there between.

In some embodiments, the charge-trapping dielectric structure 118 a, 118 b comprises a charge-trapping layer 119 (e.g. a nitride layer or a layer of randomly arranged sphere-like silicon dots) sandwiched between two dielectric layers 117, 121 (e.g., oxide layers). During operation of the first and second memory cells 102 a, 102 b, the dielectric layers 117, 121 are structured to promote electron tunneling to and from the charge-trapping layer 119, such that the charge-trapping layer 119 can retain trapped electrons that alter the threshold voltage of the split gate flash memory cells 102 a, 102 b in a discrete manner that corresponds to different data states being stored in the split gate flash memory cells 102 a, 102 b.

Memory gate sidewall spacers 120 a, 120 b are arranged on outer edges of the ledges formed by upper surface of the charge-trapping dielectric structure 118 a, 118 b. In some embodiments, the memory gate sidewall spacers 120 a, 120 b comprise first, inner memory gate spacers 122 and second, outer memory gate spacers 124. The first memory gate spacers 122 are arranged on ledges of the first and second memory gates 112 a, 112 b and extend along outer sidewalls of the first and second memory gates 112 a, 112 b. The second memory gate spacers 124 are arranged on the charge-trapping dielectric structure 118 a, 118 b and extend along outer sidewalls of the first memory gate spacers 122.

Nitride-free or oxide spacers 126 a, 126 b are formed in sidewall recesses of the charge-trapping dielectric structure 118 a, 118 b, and can extend upwardly along an outer sidewall of the second memory gate spacers 124 over an outer edge of the channel regions 114 a, 114 b nearest the individual source regions 104 a, 104 b. The material of nitride-free or oxide spacers 126 a, 126 b can also be disposed along an inner sidewall of select gates 110 a, 110 b (see 128 a, 128 b), and can extend into a sidewall recess within SG dielectrics 116 a, 116 b. The nitride-free or oxide spacers 126 a, 126 b can each have an upper surface that is tapered to have a first height at the memory gate sidewall spacers 120 a, 120 b and a second, reduced height nearer the first and second individual source regions 104 a, 104 b.

Nitride sidewall spacers 130 a, 130 b, such as made of silicon nitride (e.g., Si3N4) or silicon oxynitride (SiOxNy), can extend along outer sidewalls of the nitride-free or oxide spacers 126 a, 126 b. An inter-layer dielectric (ILD) 132, such as silicon dioxide or a low-κ dielectric material, is disposed over the structure, and contacts 134 extend downward through the ILD layer 132 to make contact with a silicide layer 136 on an upper region of the individual source regions 104 a, 104 b and common drain region 106.

By positioning the oxide spacer layer or the nitride-free spacer 126 a, 126 b over an edge portion of channel regions 114 a, 114 b; the spacers 126 a, 126 b “push” the nitride sidewall spacers 130 a, 130 b outwards, which limits undesirable charge-trapping due to the nitride sidewall spacers 130 a, 130 b. Thus, Vt degradation over a lifetime of the memory cells 102 a, 102 b is limited.

With reference to FIG. 2, a flowchart of some embodiments of a method 200 for manufacturing an integrated circuit is provided.

At 202, a pair of select gates are formed over a semiconductor substrate.

At 204, a charge-trapping layer is formed over the pair of select gates and over the semiconductor substrate. A memory gate layer is then formed over the charge-trapping layer.

At 206, a first memory gate spacer layer is conformally formed over the memory gate layer.

At 208, the first memory gate spacer layer and memory gate layer are etched back to establish memory gate precursors and first memory gate spacers. The memory gate precursors are formed along outer sidewalls of the pair of select gates and between neighboring sidewalls of the select gates. The first memory gate spacers are disposed along ledges in the memory gate precursors, wherein the ledges are on outer sidewalls of the memory gate precursors.

At 210, the memory gate precursors are recessed to expose sidewalls of the charge-trapping layer and to form memory gates along the outer sidewalls of the pair of select gates.

At 212, second memory gate spacers are formed along outer sidewalls of the first memory gate spacers and along the exposed sidewalls of the charge trapping layer.

At 214, the remaining memory gate material is removed from between neighboring sidewalls of the neighboring select gates.

At 216, portions of the charge-trapping layer that are not covered by the memory gates and memory gate spacers are removed.

At 218, an oxide spacer or nitride-free spacer is formed along outer sidewalls of the second memory gate spacers and along outer sidewalls of the charge-trapping layer. The oxide or nitride-free spacer extends under the second memory gate spacers.

At 220, nitride sidewall spacers are formed along inner sidewalls of the select gates and outer sidewalls of the oxide or nitride-free spacer.

At 222, an ion implantation operation is carried out to form source/drain regions. A silicide layer, such as a nickel silicide for example, is formed over the source/drain regions.

At 224, an ILD layer is formed over the structure. The structure is then planarized, and contacts are formed through the ILD layer to ohmically connect to the source/drain regions.

While the disclosed method 200 is illustrated and described herein as a series of acts or events, it will be appreciated that the illustrated ordering of such acts or events are not to be interpreted in a limiting sense. For example, some acts may occur in different orders and/or concurrently with other acts or events apart from those illustrated and/or described herein. Further, not all illustrated acts may be required to implement one or more aspects or embodiments of the description herein, and one or more of the acts depicted herein may be carried out in one or more separate acts and/or phases.

With reference to FIGS. 3-19, cross-sectional views of a method of forming a pair of split gate memory cells according to some embodiments are provided. Although FIGS. 3-19 are described in relation to method 200, it will be appreciated that the structures disclosed in FIGS. 3-19 are not limited to such a method.

FIG. 3 illustrates some embodiments of a cross-sectional view 300 corresponding to act 202.

As shown in cross-sectional view 300, a semiconductor substrate 108 is provided. A select gate dielectric layer 116′ is formed on the semiconductor substrate 108, and a select gate layer is formed over the select gate dielectric layer 116′. A select gate (SG) hard mask 302 a, 302 b is then formed over the select gate layer, and an etch is carried out with the SG hard mask in place to form a pair of select gates 110 a, 110 b. In some embodiments, the SG hard mask 302 a, 302 b is formed by a lithographic process, wherein a layer of photoresist liquid is spun onto the select gate layer and the photoresist is selectively exposed to light through lithography. The exposed resist is then developed and can constitute the SG hard mask 302 a, 302 b, or can be used to pattern a nitride layer or another layer(s) to constitute the SG hard mask 302 a, 302 b.

The semiconductor substrate 108 can be n-type or p-type, and can, for example, be a silicon wafer, such as a Si bulk wafer or a silicon-on-insulator (SOI) wafer. If present, an SOI substrate comprises an active layer of high quality silicon, which is separated from a handle wafer by a buried oxide layer. The select gate dielectric layer 116′ can be an oxide, such as silicon dioxide, or a high-κ dielectric material. The select gates 110 a, 110 b are made of a conductive material, such as doped polysilicon. The SG hard masks 302 a, 302 b often include nitrogen, and can be silicon nitride in some embodiments.

FIG. 4 illustrates some embodiments of a cross-sectional view 400 corresponding to act 204.

As shown in cross-sectional view 400, a charge-trapping layer 118′ is formed over an upper surface of the SG hard masks 302 a, 302 b, along sidewalls of SG hard masks 302 a, 302 b; along sidewalls of select gates 110 a, 110 b; and along sidewalls of SG dielectric layer 116′. A memory gate (MG) layer 112′ is then formed over the upper surfaces and sidewalls of the charge-trapping layer 118′.

In some embodiments, the charge-trapping layer 118′ can be formed by plasma enhanced chemical vapor deposition (PECVD). In some embodiments, the charge-trapping layer 118′ includes a charge-trapping silicon nitride layer sandwiched between two silicon dioxide layers to create a three-layer stack commonly referred to as an “ONO” layer. In other embodiments, the charge-trapping layer 118′ may include a silicon-rich nitride film or a layer of silicon nanoparticle dots, or any film that includes, but is not limited to, silicon, oxygen, and nitrogen in various stoichiometries. In some embodiments, the MG layer 112′ can be, for example, doped polysilicon or metal. The MG layer 112′ can be formed by deposition techniques such as chemical vapor deposition (CVD) or physical vapor deposition (PVD), for example.

FIG. 5 illustrates some embodiments of a cross-sectional view 500 corresponding to act 206.

As shown in cross-sectional view 500, first memory gate spacer layer 122′ is formed over the upper surfaces and sidewalls of the memory gate layer 112′. The first memory gate spacer layer 122′ can be a conformal layer made of silicon nitride, for example. In some embodiments, the first memory gate spacer layer 122′ can be formed by plasma enhanced chemical vapor deposition (PECVD), chemical vapor deposition (CVD) or physical vapor deposition (PVD).

FIG. 6 illustrates some embodiments of a cross-sectional view 600 corresponding to act 208.

As shown in cross-sectional view 600, first MG spacers 122 are formed directly along sidewalls of the memory gate precursors 112 a′, 112 b′. In some embodiments, the first memory gate spacers 122 are formed by carrying out an anisotropic etch 602 to etch the first memory gate spacer layer 122′ and the memory gate layer 112′ back to form first MG spacers 122 and memory gates precursors 112 a′, 112 b′.

FIG. 7 illustrates some embodiments of a cross-sectional view 700 corresponding to act 210.

As shown in cross-sectional view 700, a second etch 702 is performed to recess the memory gate precursors 112 a′, 112 b′, thereby forming memory gates 112 a, 112 b. The first memory gate spacers 122 protect the upper corners of the memory gates 112 a, 112 b during second etch 702. In some embodiments, the second etch 702 may be performed using a dry etchant (e.g., an RIE etch, a plasma etch, etc.) or a wet etchant (e.g., hydrofluoric acid). The second etch 702 recesses the memory gate precursors to a height level substantially equal to that of the select gates 110 a, 110 b. An etchant used in the second etch 702 may be highly-selective to the charge-trapping layer 118′, so as to not damage the charge-trapping layer 118′.

FIG. 8 illustrates some embodiments of a cross-sectional view 800 corresponding to act 212.

As shown in cross-sectional view 800, second MG spacers 124 are formed directly on outer sidewalls of the first memory gate spacers 122, and directly over the charge-trapping layer 118′. The second MG spacers 124 extend along outer sidewalls (of the first MG spacers 122. In some embodiments, the second memory gate spacers 124 are formed by depositing a nitride layer over the entire structure and performing an anisotropic etch to form second MG spacers 124. In some embodiments, the second MG spacers 124 comprise silicon nitride. The material of the MG spacers may also reside over memory gates 112 a, 112 b and on exposed sidewalls of charge-trapping dielectric layer 118′.

FIGS. 9-10 illustrate some embodiments of cross-sectional views 900, 1000 corresponding to act 214.

As shown in cross-sectional view 900 (FIG. 9), a mask 904 is patterned over the structure, and with the mask 904 in place, a third etch 902 is performed to remove the remaining MG material from between neighboring select gates 110 a, 110 b; resulting in the structure of FIG. 10. In various embodiments, the etchant used in the third etch 902 may be a dry etchant (e.g., an RIE etch, a plasma etch, etc.) or a wet etchant (e.g., hydrofluoric acid).

FIGS. 10-11 illustrate some embodiments of cross-sectional views 1000, 1100 corresponding to act 216.

As shown in cross-sectional view 1000 (FIG. 10), the mask 904 has been removed, and a fourth etch 1002 is then performed to remove exposed portions of the charge-trapping layer 118′ (i.e., portions of the charge-trapping layer 118′ not covered by the memory gates 112 a, 112 b and not covered by first and second MG spacers 122, 124). In some embodiments, the fourth etch 1002 may be performed using a dry etchant (e.g., an RIE etch, a plasma etch, etc.) or a wet etchant (e.g., hydrofluoric acid), thereby resulting in the structure of FIG. 11.

As can be seen from FIG. 11, the fourth etch 1002 may remove portions of the charge-trapping dielectric layer 118′ to expose upper surface of the semiconductor substrate 108. The fourth etch 1002 may also form outer sidewall recesses 1102 in the charge trapping dielectric structure 118 a, 118 b. These outer sidewall recesses 1102 may have a rounded cross-sectional profile or a concave cross-sectional profile. In some embodiments, the fourth etch 1002 may also form inner sidewall recesses 1104 in the SG dielectric 116 a, 116 b. The amount of undercut by which these sidewall recesses undercut the overlying structures may vary widely. For example, in some embodiments, the outer sidewall recesses 1102 may have an innermost surface that terminates directly under the first MG spacers 122, but in other embodiments the outer sidewall recesses 1102 may have an innermost surface that terminates directly under the second MG spacers 124.

FIG. 12 illustrates some embodiments of a cross-sectional view 1200 corresponding to act 218.

As shown in FIG. 12, an oxide spacer layer or a nitride-free spacer layer 126′ is formed over the structure. The oxide spacer layer or the nitride-free spacer layer 126′ can be a conformal layer that fully or partially fills the inner and outer sidewall recesses 1102, 1104. In some embodiments, the oxide spacer layer is made of silicon dioxide and is formed by chemical vapor deposition (CVD), plasma vapor deposition (PVD), spin on techniques, or other suitable techniques. The nitride-free spacer layer is a dielectric layer that exhibits and absence of nitride.

FIG. 13 illustrates some embodiments of a cross-sectional view 1300 corresponding to act 218.

As shown in FIG. 13, a fifth etch 1302 is carried out to the form an oxide spacer or nitride-free spacer 126 a, 126 b along outer sidewalls of the second MG spacers 124. The fifth etch may also leave oxide spacers or nitride-free spacers 128 a, 128 b on inner sidewall of select gates 110 a, 110 b. In some embodiments, the fifth etch 1302 is an anisotropic etch, such as a highly vertical plasma etch.

FIG. 14 illustrates some embodiments of a cross-sectional view 1400 corresponding to act 220.

As shown in cross-sectional view 1400, a nitride spacer material 130′ is formed over the structure. In some embodiments, the sidewall spacer material 130′ can be silicon nitride. In some embodiments, the nitride spacer material 130′ is formed concurrently with a sidewall spacer formed along sidewalls of a gate electrode on a logic region of the semiconductor substrate 108. The logic region can be separate from a memory region where the split gate memory device are formed.

FIG. 15 illustrates some embodiments of a cross-sectional view 1500 corresponding to act 220.

As shown in cross-sectional view 1500, the nitride spacer material 130′ is etched to form nitride sidewall spacers 130 a, 130 b extending along outer sidewalls of the oxide spacer layer or the nitride-free spacer layer 126. By positioning the oxide spacers or the nitride-free spacers 126 a, 126 b over the channel region between source/drain regions, the spacers 126 a, 126 b “push” the nitride sidewall spacer 130 a, 130 b outwards; thereby limiting undesirable charge-trapping in the final device.

FIG. 16 illustrates some embodiments of a cross-sectional view 1600 corresponding to act 222.

As shown in cross-sectional view 1600, an ion implantation 1602 is carried out to form individual source regions 104 a, 104 b, and common drain region 106 in the semiconductor substrate 108. A silicide layer 136 is formed over the individual source regions 104 a, 104 b, and common drain region 106 to facilitate ohmic connection to the individual source regions and common drain region. Alternatively, rather than ion implantation, individual source regions 104 a, 104 b, and common drain region 106 can be formed by forming a heavily doped layer over the structure, and dopants can be out-diffused from the heavily doped layer into the substrate to form individual source regions 104 a, 104 b, and common drain region 106. In some embodiments, the individual source regions 104 a, 104 b and common drain region 106 are self-aligned to edges of the nitride spacers 130 a, 130 b or nitride-free or oxide spacers 126, 128.

FIG. 17 illustrates some embodiments of a cross-sectional view 1700 corresponding to act 224.

As shown in cross-sectional view 1700, an interlayer dielectric (ILD) layer 132, for example a low-κ material, is formed to fill spaces over the silicide layer 136 and cover the workpiece. A planarization process is also carried out on the structure of FIG. 17 to reach CMP plane 1702, as shown in FIGS. 17-18.

FIG. 18 illustrates some embodiments of a cross-sectional view 1800 corresponding to act 224.

As shown in FIG. 18, a planarization process is performed to form select gates 110 a, 110 b; memory gates 112 a, 112 b; charge-trapping dielectric structure 118 a, 118 b; first memory gate spacers 122; and second memory gate spacers 124. These structures have upper surfaces planarized along a horizontal plane 1702. See also FIG. 17, which illustrates the horizontal plane 1702 prior to planarization being carried out. It is duly noted that the spacing of the horizontal plane 1702 over the upper surface of semiconductor substrate 108 can vary widely depending on the implementation. For example, in some other embodiments, the horizontal plane 1702 at which planarization is completed can be higher than illustrated, leaving some or all portions of the SG hard masks 302 a, 302 b in place in the final manufactured structure. In other embodiments, however, the horizontal plane 1702 can be lower than illustrated, removing larger portions of the illustrated structures—for example, possibly removing upper portions of spacers 126 a, 126 b to leave spacers 126 a, 126 b with a planar upper surface.

FIG. 19 illustrates some embodiments of a cross-sectional view 1900 corresponding to act 224.

As shown in cross-sectional view 1900, contacts 134 are formed through the ILD layer 132, extending to the individual source regions 104 a, 104 b and common drain region 106. In some embodiments, the contacts 134 comprise a metal, such as copper, gold, or tungsten. In some embodiments, the contacts 134 are formed by performing a patterned etch to create openings in the ILD layer 132, followed by filling the openings with a metal.

Thus, the present disclosure relates to an integrated circuit that includes a split gate flash memory cell. In some embodiments, the integrated circuit includes a semiconductor substrate having first and second source/drain regions which are separated from one another by a channel region. The channel region includes a first portion adjacent to the first source/drain region and a second portion adjacent the second source/drain region. A select gate is spaced over the first portion of the channel region and is separated from the first portion of the channel region by a select gate dielectric. A memory gate is spaced over the second portion of the channel region and is separated from the second portion of the channel region by a charge-trapping dielectric structure. The charge-trapping dielectric structure extends upwardly alongside the memory gate to separate neighboring sidewalls of the select gate and memory gate from one another. An oxide spacer or nitride-free spacer is arranged in a sidewall recess of the charge-trapping dielectric structure nearest the second source/drain region.

In other embodiments, the present disclosure relates to an integrated circuit including a pair of split gate flash memory cells. The integrated circuit includes a semiconductor substrate having a common source source/drain region and first and second individual source/drain regions which are separated from the common source/drain region by first and second channel regions, respectively. First and second select gates are spaced over the first and second channel regions, respectively, and are separated from the first and second channel regions by first and second select gate dielectrics, respectively. First and second memory gates are spaced over the first and second channel regions, respectively, and are separated from the semiconductor substrate by a charge-trapping dielectric structure. The charge-trapping dielectric structure extends upwardly along outer sidewalls of the first and second select gates to separate the outer sidewalls of the select gates from inner sidewalls of the memory gates. An oxide spacer or nitride-free spacer is arranged in a sidewall recess of the charge-trapping dielectric structure nearest the first or second individual source/drain region.

In yet another embodiment, the present disclosure relates to a method of forming a split gate memory device. In this method, a pair of select gates is formed over a semiconductor substrate. A charge-trapping layer is formed over the semiconductor substrate and along outer sidewalls of the select gates. Memory gates are formed over the charge-trapping layer. The memory gates are adjacent to the outer sidewalls of the pair of select gates and are separated from the outer sidewalls of the pair of select gates by the charge-trapping layer. Memory gate spacers are formed along outer sidewalls of the memory gates. Portions of the charge-trapping layer not covered by the memory gates and the memory gate spacers are removed to leave sidewall recesses in the charge-trapping layer under outer sidewalls of the memory gate spacers. An oxide spacer or nitride-free spacer is then formed along outer sidewalls of the memory gate spacers. The oxide spacer or nitride-free spacer extends into the sidewall recess in the charge-trapping layer.

It will be appreciated that in this written description, as well as in the claims below, the terms “first”, “second”, “second”, “third” etc. are merely generic identifiers used for ease of description to distinguish between different elements of a figure or a series of figures. In and of themselves, these terms do not imply any temporal ordering or structural proximity for these elements, and are not intended to be descriptive of corresponding elements in different illustrated embodiments and/or un-illustrated embodiments. For example, “a first dielectric layer” described in connection with a first figure may not necessarily correspond to a “first dielectric layer” described in connection with a second figure (e.g., and may even correspond to a “second dielectric layer” in the second figure), and may not necessarily correspond to a “first dielectric layer” in an un-illustrated embodiment.

The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure. 

1-14. (canceled)
 15. A method of forming a split gate memory device, the method comprising: forming a pair of select gates over a semiconductor substrate; forming a charge-trapping layer over the semiconductor substrate and along outer sidewalls of the select gates; forming memory gates over the charge-trapping layer, the memory gates being adjacent to the outer sidewalls of the pair of select gates and separated from the outer sidewalls of the pair of select gates by the charge-trapping layer; forming memory gate spacers along outer sidewalls of the memory gates; removing portions of the charge-trapping layer not covered by the memory gates and the memory gate spacers and leaving sidewall recesses in the charge-trapping layer under outer sidewalls of the memory gate spacers; and forming oxide spacers or nitride-free spacers which extend along outer sidewalls of the memory gate spacers and which extend into the sidewall recesses in the charge-trapping layer.
 16. The method of claim 15, further comprising: forming nitride spacers along outer sidewalls of the oxide spacers or along outer sidewalls of the nitride-free spacers.
 17. The method of claim 16, wherein the nitride spacers formed along the outer sidewalls of the oxide spacers or along the outer sidewalls of the nitride-free spacers are formed concurrently with a sidewall spacer formed along sidewalls of a gate electrode on a logic region of the semiconductor substrate, the logic region being distinct from a memory region of the semiconductor substrate where the split gate memory device is formed.
 18. (canceled)
 19. The method of claim 16, further comprising: after the nitride spacers have been formed, forming source/drain regions which are self-aligned to edges of the nitride spacers.
 20. The method of claim 15, wherein the oxide spacers or nitride-free spacers extend upwardly along outer sidewalls of the memory gate spacers and extend continuously downward to bottoms of the sidewall recesses to directly contact an upper surface of the semiconductor substrate.
 21. A method, comprising: providing a semiconductor substrate; forming a pair of select gates over the substrate, the pair of select gates separated from the substrate by a select gate dielectric; forming a charge-trapping dielectric structure over the pair of select gates and over the semiconductor substrate; forming a memory gate over the charge-trapping dielectric structure, the memory gate arranged to an outermost side of a first select gate of the pair of select gates and separated from the substrate by the charge-trapping dielectric structure; forming a memory gate sidewall spacer along an outer sidewall of the memory gate; performing a first etch to remove exposed portions of the charge-trapping dielectric structure from over the semiconductor substrate, wherein the first etch leaves a sidewall recess in the charge-trapping dielectric structure and the sidewall recess undercuts an outer sidewall of the memory gate sidewall spacer; forming a conformal oxide or nitride-free layer over the pair of select gates, over the memory gate, and over the memory gate sidewall spacer, the conformal oxide or nitride-free layer extending into the sidewall recess; performing a second etch to etch back the conformal oxide or nitride-free layer to leave an oxide spacer or nitride-free spacer in the sidewall recess of the charge-trapping dielectric structure; and forming a source/drain region in the semiconductor substrate arranged to an outermost sidewall of the oxide spacer or nitride-free spacer.
 22. The method of claim 21, wherein the charge-trapping dielectric structure extends upwardly alongside the memory gate to separate neighboring sidewalls of the select gate and memory gate from one another, and extends laterally past the outer sidewall of the memory gate to establish a ledge before terminating at the sidewall recess.
 23. The method of claim 22, wherein the memory gate sidewall spacer is disposed on the ledge and extends upwardly alongside the sidewall of the memory gate.
 24. The method of claim 23, wherein the oxide spacer or nitride-free spacer extends upwardly along an outer sidewall of the memory gate sidewall spacer, and has an upper surface that is tapered to have a first height at the memory gate sidewall spacer and a second, reduced height nearer the source/drain region.
 25. The method of claim 21, wherein the sidewall recess extends under the memory gate sidewall spacer but does not undercut the memory gate.
 26. The method of claim 21, wherein the charge-trapping dielectric structure comprises a nitride layer sandwiched between first and second dielectric layers, or wherein the charge-trapping dielectric structure comprises a layer of sphere-like silicon dots sandwiched between first and second dielectric layers.
 27. The method of claim 21, wherein the oxide spacer or nitride-free spacer is made of silicon dioxide and the sidewall recess has a concave or rounded cross-sectional profile.
 28. The method of claim 21, further comprising: prior to forming the source/drain region, forming a nitride spacer along an outer sidewall of the oxide spacer or the nitride-free spacer.
 29. The method of claim 28, wherein the source/drain region is self-aligned to an outer edge of the nitride spacer.
 30. A method of forming a split gate memory device, comprising: forming a pair of select gates over a semiconductor substrate; forming a charge-trapping layer over the pair of select gates and over the semiconductor substrate; forming a memory gate layer over the charge-trapping layer; forming a first memory gate spacer layer over the memory gate layer, and etching back the first memory gate spacer layer and the memory gate layer to form memory gate precursors and first memory gate spacers; recessing upper surfaces of the memory gate precursors to expose sidewalls of the charge-trapping layer and to establish memory gates along outermost sidewalls of the pair of select gates; forming a second memory gate spacer layer and etching back the second memory gate spacer layer to establish second memory gate spacers along outer sidewalls of the first memory gate spacers and along the exposed sidewalls of the charge-trapping layer; performing an etch to remove portions of the charge-trapping layer not covered by the memory gates and the memory gate spacers, thereby leaving sidewall recesses in the charge-trapping layer under outer sidewalls of the second memory gate spacers; and forming oxide spacers or nitride-free spacers which extend along outer sidewalls of the second memory gate spacers and which extend into the sidewall recesses in the charge-trapping layer.
 31. The method of claim 30, further comprising: forming nitride spacers along outer sidewalls of the oxide spacers or along outer sidewalls of the nitride-free spacers.
 32. The method of claim 31, wherein the nitride spacers formed along the outer sidewalls of the oxide spacers or along the outer sidewalls of the nitride-free spacers are formed concurrently with a sidewall spacer formed along sidewalls of a gate electrode on a logic region of the semiconductor substrate, the logic region being distinct from a memory region of the semiconductor substrate where the split gate memory device is formed.
 33. The method of claim 31, further comprising: after the nitride spacers have been formed, forming source/drain regions which are self-aligned to edges of the nitride spacers.
 34. The method of claim 30, wherein the sidewall recesses extend under the second memory gate spacers but do not undercut the memory gates.
 35. The method of claim 30, wherein the oxide spacers or nitride-free spacers extend upwardly along outer sidewalls of the second memory gate spacers and extend continuously downward to bottoms of the sidewall recesses to directly contact an upper surface of the semiconductor substrate. 